EFFECT OF FAST-NEUTRON IRRADIATION ON THE PHOTOLUMINESCENCE OF N-TYPEGAAS(TE) CRYSTALS

The effect of neutron irradiation (phi=10(14)-10(15) cm(-2)) and subse quent anneals (T=100-750 degrees C) on the photoluminescence of strong ly tellurium-doped n-type GaAs crystals (n(0) similar or equal to 2x10 (18) cm(-3)) has been investigated. It is shown that the indicated rad iation-thermal action with increasing anneal temperature results at fi rst (at T similar or equal to 300 degrees C) in the appearance of an i ntense luminescence band with a radiation maximum near 1.35 eV and the n (at T>550 degrees C) in a decrease of the intensity of the band. Thi s is due to radiation-stimulated production of VGaTeAsVAs pairs at mod erate heating temperatures and subsequent dissociation of these pairs at elevated heating temperatures. (C) 1997 American Institute of Physi cs.