ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES

Authors
KUROVA IA ORMONT NN GOLIKOVA OA KUDOYAROVA VK
Citation
Ia. Kurova et al., ON THE RELAXATIONAL CHARACTERISTICS AND STABILITY OF A SI-H FILMS GROWN AT HIGH-TEMPERATURES, Semiconductors, 31(5), 1997, pp. 452-454
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
5
Year of publication
1997
Pages
452 - 454
Database
ISI
SICI code
1063-7826(1997)31:5<452:OTRCAS>2.0.ZU;2-G
Abstract
Some characteristics of the photo- and thermal stability in a-Si:H fil ms, which were deposited in a triode reactor at 300-390 degrees C and which possess different hydrogen concentrations C-H, have been investi gated. It has been found that the equilibration temperature T-E increa ses as C-H decreases. Under prolonged illumination the photoconductivi ty decreases as t(-1/3) in films with high values of C-H. In films wit h a low hydrogen content the photoconductivity drops more slowly. (C) 1997 American lnstitute of Physics.