Aa. Kopylov et An. Kholodilov, INFRARED-ABSORPTION IN POROUS SILICON OBTAINED IN ELECTROLYTES CONTAINING ETHANOL, Semiconductors, 31(5), 1997, pp. 470-472
The effect of treatments in hydrofluoric acid and annealing at T=350 d
egrees C on the optical properties of porous silicon in the infrared r
egion of the spectrum has been investigated, An interpretation is give
n for the observed absorption bands. The index of refraction and thick
ness of the porous layer are estimated. (C) 1997 American Institute of
Physics.