ELECTRICAL-PROPERTIES OF THE SOLID-SOLUTIONS P-TYPE GAAS1-XSBX DOPED WITH GERMANIUM

Epitaxial Ge-doped p-type GaAs1-xSbx films (x=0-0.1; N-Ge=0.01-10 at.% in a liquid phase; hole density at room temperature (0.06-40x10(18) c m(-3)), grown by liquid-phase epitaxy, were investigated. It was found that for the same Ge concentration in the liquid phase the hole densi ty in the solid solution is approximately two times higher than in GaA s, irrespective of the Sb content. The activation energy of the german ium acceptor surd the critical density for the metal-insulator transit ion were found: epsilon(1)=22+/-2 meV and p(c)=(3.9+/-0.3)x10(18) cm(- 3) for x=0.06. (C) 1997 American Institute of Physics.