POLARIZATION ANISOTROPY OF OPTICAL INTERBAND-TRANSITIONS IN STRAINED INGAAS GAAS QUANTUM WIRES/

The optical properties appearing in strained quantum wires as a result of the inhomogeneity of the elastic deformations distribution inside the wires and in the surrounding barrier material are investigated. An analytical approximation is used to calculate this distribution. It i s shown that the short-wavelength shift of the photoluminescence and t he polarization anisotropy of photoluminescence in a direction normal to the plane of the wires are determined mainly by the difference of t he elastic deformations from the biaxial deformations. This result is confirmed by comparing the computed polarization-dependent photolumine scence spectra with the experimental data obtained for InGaAs/GaAs qua ntum wires with a 7 x 60-nm cross section. (C) 1997 American Institute of Physics.