Sa. Gurevich et al., POLARIZATION ANISOTROPY OF OPTICAL INTERBAND-TRANSITIONS IN STRAINED INGAAS GAAS QUANTUM WIRES/, Semiconductors, 31(5), 1997, pp. 509-514
The optical properties appearing in strained quantum wires as a result
of the inhomogeneity of the elastic deformations distribution inside
the wires and in the surrounding barrier material are investigated. An
analytical approximation is used to calculate this distribution. It i
s shown that the short-wavelength shift of the photoluminescence and t
he polarization anisotropy of photoluminescence in a direction normal
to the plane of the wires are determined mainly by the difference of t
he elastic deformations from the biaxial deformations. This result is
confirmed by comparing the computed polarization-dependent photolumine
scence spectra with the experimental data obtained for InGaAs/GaAs qua
ntum wires with a 7 x 60-nm cross section. (C) 1997 American Institute
of Physics.