PHOTORESPONSE OF CDXHG1-XTE CRYSTALS DUE TO COMPOSITION INHOMOGENEITIES

Citation
Is. Virt et Di. Tsyutsyura, PHOTORESPONSE OF CDXHG1-XTE CRYSTALS DUE TO COMPOSITION INHOMOGENEITIES, Semiconductors, 31(5), 1997, pp. 515-516
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
5
Year of publication
1997
Pages
515 - 516
Database
ISI
SICI code
1063-7826(1997)31:5<515:POCCDT>2.0.ZU;2-A
Abstract
It is shown that when CdxHg1-xTe crystals are irradiated with light wi th photon energy less than the band gap, photoconductivity due to gene ration of electron-hole pairs on inhomogeneities with a lower value of x is possible. The inhomogeneities are modeled in the form of a clust er network of small-angle boundaries of blocks with a high rate of rec ombination of nonequilibrium charge carriers. The magnitude of the pho toresponse (<(Delta p)over bar>) versus the size (r(c)) of the cluster network is estimated. (C) 1997 American Institute of Physics.