POSITIVE MAGNETORESISTANCE IN FILMS OF THE FERROMAGNETIC SEMICONDUCTOR EU1-XSMXO

The positive magnetoresistance effect in a film of the ferromagnetic s emiconductor Eu1-xSmxO has been studied; this effect is not characteri stic of materials of this class. The effect of the external magnetic a nd electric fields and temperature on the positive magnetoresistance w as investigated. It is shown that the magnitude of the magnetoresistan ce Delta rho/rho(0) is determined by scattering of free charge carrier s by spatial fluctuations of the magnetization which are due to the no nuniform distribution of defects in the structurally disordered system (quasiamorphous film). (C) 1997 American Institute of Physics.