Doping of diamond

Authors
Citation
R. Kalish, Doping of diamond, CARBON, 37(5), 1999, pp. 781-785
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CARBON
ISSN journal
00086223 → ACNP
Volume
37
Issue
5
Year of publication
1999
Pages
781 - 785
Database
ISI
SICI code
0008-6223(1999)37:5<781:DOD>2.0.ZU;2-V
Abstract
Diamond is a wide-bandgap semiconductor with unsurpassed physical and chemi cal properties. When doped, semiconducting diamond can lead to the realizat ion of electronic and optoelectronic devices with exceptional properties. D iamond can now be doped p-type, with boron, both during CVD diamond film gr owth and by ion-implantation, and n-type with phosphorus during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of d oped semiconducting diamond are described. (C) 1999 Elsevier Science Ltd Al l rights reserved.