Electron energy-loss spectroscopy in transmission of undoped and doped diamond films

We have prepared thin diamond films by microwave assisted plasma chemical v apour deposition (MWCVD) and hot filament chemical vapour deposition (HFCVD ). Diamond powder pre-treatment of the silicon substrates or bias potential were used for nucleation enhancement. Doping of the films was carried out in two ways: in-situ during the CVD process or after the deposition by ion implantation. Scanning electron microscopy (SEM) and X-ray diffraction (XRD ) have been applied to characterize the morphology and texture. Electron en ergy-lass spectroscopy in transmission was then used to investigate the ele ctronic structure of the diamond films as a function of the preparation par ameters and the doping level. (C) 1999 Elsevier Science Ltd. All rights res erved.