P. Patsalas et al., Polycrystalline diamond formation by post-growth ion bombardment of sputter-deposited amorphous carbon films, CARBON, 37(5), 1999, pp. 865-869
Post-growth Ar+ ion beam bombardment (IBB) of amorphous carbon (a-C) films
on Si, with energies above 1 keV, induces several structural modifications
in the films, including the formation of diamond, graphite and SIC grains.
X-ray diffraction (in both conventional and grazing incidence geometry) and
high resolution electron microscopy were used to study the structure of th
e as grown films and the phases - with emphasis to diamond - that resulted
after IBB. The a-C films morphology and density were also studied by X-ray
reflectivity and show an increase in film density upon IBB. (C) 1999 Elsevi
er Science Ltd All rights reserved.