Electrical characterisation of metal/carbon/Si devices was performed. Amorp
hous carbon films rich in sp(3) bonds were grown onto n-type Si substrates
by RF magnetron sputtering at room temperature. Different deposition condit
ions were used to create different sp(3) and sp(2) configurations in order
to examine their influence on the performance of electronic devices. Suitab
le metalisation was used to fabricate devices, which were then characterise
d electrically. Electrical characterisation using I-V, C-G-V and G-omega te
chniques showed temperature dependent currents through the devices which in
crease rapidly when forward bias is applied. This behaviour was found to be
dependent on the sp(3)-sp(2) contents of the films. The devices behaved li
ke metal-insulator-semiconductor diodes with a defect insulator resulting i
n creating thermally activated currents through the devices. The effect of
nitrogen introduced in the growth process to produce carbon nitride films w
as also examined. Different amounts of nitrogen were used and the same char
acterisation process has been used for a variety of samples. The films were
nearly perfect insulators and the corresponding devices showed a clear MIS
behaviour. Thus, the room temperature magnetron sputtering technique produ
ced films, with electronic properties dependent on the C-C bonding configur
ation. Moreover it is shown that the nitrogenated films made under certain
conditions can be used as insulators in devices. (C) 1999 Elsevier Science
Ltd. All rights reserved.