Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization

Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperatu re and sputtering power. This layer has poor step coverage and high resisti vity, but acts as a crystallographic seed layer for the subsequent collimat ed TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The res ulting TiN layer has a low resistivity of 72.25 mu Omega cm, high <111> pre ferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches. (C) 1999 The Electrochemical Society. S1099-006 2(99)01-023-8. All rights reserved.