Electronic properties of semiconducting rhenium silicide

Authors
Filonov, AB Migas, DB Shaposhnikov, VL Dorozhkin, NN Borisenko, VE Lange, H Heinrich, A
Citation
Ab. Filonov et al., Electronic properties of semiconducting rhenium silicide, EUROPH LETT, 46(3), 1999, pp. 376-381
Citations number
18
Categorie Soggetti
Physics
Journal title
EUROPHYSICS LETTERS
ISSN journal
02955075 → ACNP
Volume
46
Issue
3
Year of publication
1999
Pages
376 - 381
Database
ISI
SICI code
0295-5075(19990501)46:3<376:EPOSRS>2.0.ZU;2-Y
Abstract
For the first time, theoretical arguments for the semiconducting properties of the ReSi1.75 phase have been given by means of ab initio linear muffin- tin orbital method (LMTO) calculations. It is shown that the material is in deed a narrow-gap semiconductor with an indirect gap value of 0.16 eV. The first direct transition with appreciable oscillator strength at 0.30 eV is predicted.