A general translinear principle for subthreshold MOS transistors

This paper revises the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold, Due to t he exponential nature of subthreshold MOS transistors, the translinear prin ciple applies immediately as long as the source-to-bulk voltages are made e qual to zero (or constant). This paper addresses the conditions under which subthreshold MOS transistors still satisfy a translinear principle, but wi thout imposing this constraint on all V-BS voltages, It is found that the t ranslinear principle results in a more general formulation than the origina lly found for BJT's since nom multiple translinear loops can be involved, T he constraint of an even number of transistors is no longer necessary, Some corollaries are stated as well and, finally, it is shown how to use the th eorem for subthreshold MOS transistors operated in the ohmic regime.