Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers

Authors
Tu, SHL Toumazou, C
Citation
Shl. Tu et C. Toumazou, Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers, IEEE CIRC-I, 46(5), 1999, pp. 628-634
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS
ISSN journal
10577122 → ACNP
Volume
46
Issue
5
Year of publication
1999
Pages
628 - 634
Database
ISI
SICI code
1057-7122(199905)46:5<628:EOTLQF>2.0.ZU;2-7
Abstract
An analytical expression for the harmonic distortion and power efficiency f or class-E power amplifiers is derived. By considering the nonideal behavio r of the switching device, we explore the dependence of power efficiency on the quality factor of the resonant circuit, as well as the current decay a ngle of the active device. The result is very useful since it predicts the power efficiency in terms of circuit parameters. The analytical expression is supported by good agreement with circuit simulations.