Dynamics of the order-chaos transition in a Gunn effect semiconductor system of nonequilibrium carriers

Citation
Pp. Gorlei et al., Dynamics of the order-chaos transition in a Gunn effect semiconductor system of nonequilibrium carriers, INORG MATER, 35(5), 1999, pp. 464-467
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
5
Year of publication
1999
Pages
464 - 467
Database
ISI
SICI code
0020-1685(199905)35:5<464:DOTOTI>2.0.ZU;2-2
Abstract
The dynamics of order-chaos transitions in Gunn effect semiconductor system s with bipolar conduction was investigated. A simple algorithm of construct ing bifurcation diagrams of continuous dynamic systems and a simple method for tracing trajectories are proposed, which allow one to accurately follow the evolution of a dissipative system, including changes in the topology o f its phase portrait accompanying the chaos-order transition.