Citation
Vg. Myagkov et al., Self-propagating high-temperature synthesis of nickel silicide in the nickel nitride plus silicon monoxide bilayer system, INORG MATER, 35(5), 1999, pp. 498-501
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685
→ ACNP
Volume
35
Issue
5
Year of publication
1999
Pages
498 - 501
Database
ISI
SICI code
0020-1685(199905)35:5<498:SHSONS>2.0.ZU;2-9
Abstract
Self-propagating high-temperature synthesis (SHS) in the Ni3N/SiO thin-film
bilayer system was studied. The results reveal an oscillating character of
the SHS process during the deposition of Ni3N onto SiO. The oscillations a
re accounted for by the fact that there is a critical thickness of the nick
el nitride layer below which the SHS process is impossible. The mechanism o
f the reaction between Ni3N and SiO layers is examined.