Cluster model for melting and crystallization of thin InSb, GaSb, CdSb, and Ge layers

Crystallization kinetics off thin layers of molten indium, gallium, and cad mium antimonides were studied. The crystallization rates of these materials depend exponentially on temperature, similar to the crystallization rate o f germanium ribbons pulled from a supercooled melt. The band gap E-g Of the se semiconductors at the melting temperature correlates with the latent hea t of crystallization per atom. The activation energies for crystallization of InSb, GaSb, CdSb, and dendritic Ge are 10.3, 21.5, 13.8, and 86 eV, resp ectively. These values are ascribed to clusters of 79 (InSb), 65 (GaSb), 81 (CdSb), and 286 (Ge) atoms. A crystallographic model for these clusters is proposed.