Properties of InSb layers doped with Ag and Au

Authors
Pashkova, ON Sanygin, VP Steblevskii, AV Totrova, GA Padalko, AG
Citation
On. Pashkova et al., Properties of InSb layers doped with Ag and Au, INORG MATER, 35(4), 1999, pp. 318-321
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
35
Issue
4
Year of publication
1999
Pages
318 - 321
Database
ISI
SICI code
0020-1685(199904)35:4<318:POILDW>2.0.ZU;2-0
Abstract
InSb layers doped with Ag and Au were grown by directional solidification. The effective segregation coefficients of Au and Ag in InSb measured on sam ples grown at a rate of 2 cm/h were found to be 3.1 x 10(-2) and 1.2 x 10(- 3), respectively. The electrical properties of the layers and the effective lifetime of photogenerated carriers were measured at 77 and 300 K. The eff ective lifetime is correlated with the specific surface area of the samples .