Ng. Galkin et al., An ultra-high-vacuum system for computer-integrated measurements of the Hall effect and conductivity of two-dimensional films, INSTR EXP R, 42(2), 1999, pp. 284-289
The design of an ultra-high-vacuum system, which is equipped with a special
unit for Hall measurements at low temperatures (120-293 K), an evaporation
unit with shields cooled by liquid nitrogen, and a low-energy electron dif
fraction analyzer, is described. The unit for Hall measurements is based on
a nitrogen-cooled coil, into which a six-probe head is built at a depth of
15 mm. The head is intended for measuring Hall parameters of ordered two-d
imensional films on silicon single crystals. A version of the two-frequency
method with double synchronous detection is implemented in a computer-cont
rolled automated system for Hall voltage and conductivity measurements. The
system has a unit for compensating nonequipotential voltages, thus allowin
g for Hall voltage measurements with an rms error of below 1.5%. The mobili
ties of carriers and their concentrations in atomically clean silicon subst
rates and surface chromium phases on silicon were measured.