Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus

Authors
Mollot, F Lamin, JF Schuler, O
Citation
F. Mollot et al., Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus, J PHYS IV, 9(P2), 1999, pp. 145-150
Citations number
16
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
11554339 → ACNP
Volume
9
Issue
P2
Year of publication
1999
Pages
145 - 150
Database
ISI
SICI code
1155-4339(199903)9:P2<145:SPOGMB>2.0.ZU;2-P
Abstract
It appears that very few Molecular Beam Epitaxy apparatus are simultaneousl y equipped with Aluminium and Phosphorus sources. We describe here the acti vities at IEMN in this field and present two systems of materials where Alu minium and Phosphorus have fruitfully cohabited, GaInP on GaAs interfaces a nd GaAsP wells for light hole transport.