Metastable population of self-organized InAs GaAs quantum dots

In the present work, we report on the investigation of a p-n heterostructur e with InAs/GaAs quantum dots (QD) by capacitance-voltage and deep level tr ansient spectroscopy. We have observed controllable and reversible metastab le population of the energy states of quantum dots and interface in the str ucture containing one plane of InAs QDs as a function of temperature of iso chronous annealing as well as under bias-on-bias-off cooling conditions and white light illumination. This effect was attributed to the change in the Fermi level position due to the hole capture on self-trapped defects simila r to the DX center in GaAs after isochronous annealing and white light illu mination.