Effects of spontaneous emission rates on lasing characteristics of long-wavelength (1.3 mu m) GaAs-based quantum dot lasers

Data are presented characterizing the spectral emission and electroluminesc ence efficiency dependence on temperature of InGaAs/GaAs quantum dots that result in 1.3 mu m lasing at room temperature. Efficient ground state emiss ion is achieved at 80K, but the spontaneous efficiency decreases with incre asing temperatures. The ground state spectral width is 26 meV at 80K and 31 meV at 300K. Ground state lasing is obtained over a wide range of temperat ures, with an ultralow threshold current density of 14 A/cm(2) obtained at 80K.