Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition

Authors
Tsatsul'nikov, AF Volovik, BV Ledentsov, NN Maximov, MV Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Kop'ev, PS Alferov, ZI Kozin, IA Belousov, MV Soshnikov, IP Werner, P Litvinov, D Fischer, U Rosenauer, A Gerthsen, D
Citation
Af. Tsatsul'Nikov et al., Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, J ELEC MAT, 28(5), 1999, pp. 537-541
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
28
Issue
5
Year of publication
1999
Pages
537 - 541
Database
ISI
SICI code
0361-5235(199905)28:5<537:LISWIQ>2.0.ZU;2-9
Abstract
Structural and optical properties of structures with nanoscale InAs islands obtained by submonolayer deposition and embedded in an AlxGa1-xAs matrix i s investigated. Deposition of several planes of InAs insertions results in formation of arrays of vertically correlated islands. The lateral size of t he islands in a column is about 10 nm. Lasing via the ground states of the islands without external optical confinement is demonstrated.