Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers

Authors
Liebe, J Haupt, L Kattwinkel, A Hamad, N Rao, GH Barner, K Gommert, E Wecker, J von Helmolt, R Braunstein, R Sun, GS Medvedeva, IV
Citation
J. Liebe et al., Evidence of photogenerated carriers in the semiconducting state of Nd0.67Sr0.37MnO3-delta epitaxial layers, J MAGN MAGN, 197, 1999, pp. 484-486
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853 → ACNP
Volume
197
Year of publication
1999
Pages
484 - 486
Database
ISI
SICI code
0304-8853(199905)197:<484:EOPCIT>2.0.ZU;2-3
Abstract
Time-resolved thermoelectric power measurements on Nd2/3Sr1/3MnO3-delta epi taxial layers show a voltage transient which is superimposed to the usual q uasistatic thermovoltage decay which is due to heat diffusion, but only in the activated regime. The characteristic temperature of the separation is 1 40 K. The extra transients are ascribed to the decay of an ambipolar charge distribution in trap states. (C) 1999 Elsevier Science B.V. All rights res erved.