Electronic structure and magnetism of Gd-5(Si, Ge)(4) compounds

The electronic structure of Gd5Si4, Gd5Si2Ge2 and Gd5Ge4 was investigated w ith X-ray photoelectron spectroscopy (XPS) and compared to the results of m agnetic susceptibility and electrical resistivity measurements. High-temper ature magnetic susceptibility exhibits anomalies for all the compounds. Var ious magnetic transitions, present in the compounds, manifest in the electr ical resistivity in different ways. The details of the electronic structure , obtained from the XPS measurements, are discussed with respect to the Gd- Si, Gd-Ge bonding, and charge transfer. (C) 1999 Elsevier Science B.V. All rights reserved.