Impact of mesa and planar processes on the radiation hardness of Si detectors

Authors
Casse, G Glaser, M Grigoriev, E Lemeilleur, F Ruzin, A Sopko, B Taffard, A
Citation
G. Casse et al., Impact of mesa and planar processes on the radiation hardness of Si detectors, NUOV CIM A, 112(1-2), 1999, pp. 1-12
Citations number
11
Categorie Soggetti
Physics
Journal title
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS
ISSN journal
11241861 → ACNP
Volume
112
Issue
1-2
Year of publication
1999
Pages
1 - 12
Database
ISI
SICI code
1124-1861(199901/02)112:1-2<1:IOMAPP>2.0.ZU;2-9
Abstract
Various types of silicon mono-crystals (epitaxial of different thickness, s tandard and oxygenated float zone material) have been grown and processed w ith mesa and planar technologies to produce 5 x 5 mm(2) pad detectors. The detectors have been irradiated with 24 GeV/c protons. Electrical properties of the detectors have been studied, before and after irradiation, in order to find the correlation with the material type, the fabrication process an d the radiation hardness.