2D numerical modeling of Si microstrip detectors under heavy radiation damage conditions

An approach to the numerical simulation of silicon microstrip detectors is discussed, with particular emphasis on the modeling of radiation damage con sequences. Within the framework of a general-purpose device simulator, exte nsion have been made aimed at describing both the transduction mechanism ex ploited by such devices and at providing a physically grounded account of s tructural modification induced by continuing exposure to radiation. In part icular, influence of deep-level traps is discussed, and some limitations of simpler models are pointed out.