Characterization of irradiated wedge silicon microstrip detectors

Two double-sided trapezoidal microstrip silicon detectors have been heavily irradiated, one with similar to 1 MeV neutrons and one with 24 GeV protons , up to a fluence of 8 x 10(13) cm(-2). The neutron irradiation has been pe rformed uniformly, while the proton irradiation has been performed only loc ally (similar to 1 cm(2)), at one end of the detector. A complete electrica l characterization has been carried out on the detectors before and after i rradiation (I-V curves, interstrip coupling impedances, coupling capacitanc es, bias resistances have been measured), keeping the detectors at low temp erature (-10 degrees C) in order to avoid reverse annealing effects.