Atomic placement of Al on the GaAs {001} c(4x4) reconstruction determined by angle-resolved secondary-ion mass spectrometry

Authors
Goss, SH Fisher, GL Kodali, PBS Garrison, BJ Winograd, N
Citation
Sh. Goss et al., Atomic placement of Al on the GaAs {001} c(4x4) reconstruction determined by angle-resolved secondary-ion mass spectrometry, PHYS REV B, 59(16), 1999, pp. 10662-10669
Citations number
45
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
16
Year of publication
1999
Pages
10662 - 10669
Database
ISI
SICI code
0163-1829(19990415)59:16<10662:APOAOT>2.0.ZU;2-I
Abstract
The atomic structure of the initial Al/GaAs {001} c(4 X 4) interface has be en examined by angle-resolved secondary-ion mass spectrometry. We find that Al atoms adsorb to second layer As atoms and do not disrupt the surface re construction up to 1.0 ML of deposited Al when prepared in situ via molecul ar beam epitaxy. The Al atoms are found not to adsorb to first layer As ato ms and do not dimerize on this surface. The structure is determined by comp aring angular distributions of Al+ and Ga+ ions to molecular-dynamics simul ations of the ion bombardment event. [S0163-1829(99)03716-9].