Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures

Authors
Agui, A Shin, S Wu, C Shiba, K Inoue, K
Citation
A. Agui et al., Bulk and interface Al 2p core excitons in GaAs/AlAs/GaAs heterostructures, PHYS REV B, 59(16), 1999, pp. 10792-10795
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
16
Year of publication
1999
Pages
10792 - 10795
Database
ISI
SICI code
0163-1829(19990415)59:16<10792:BAIA2C>2.0.ZU;2-K
Abstract
Aluminum 2p soft-x-ray emission and absorption spectra (XES and XAS) of a G aAs/AIAs/GaAs heterostructure semiconductor have been measured with high-en ergy resolution. The Al 2p XES shows a similar feature to that of AlxGa1-xA s alloys. Strong Al 2p core excitons have been observed in XAS, and attribu ted to the X- and L-like states in the conduction band. The XAS profile has changed depending on the incident angle of the excitation x rays. This dep endence may relate to the symmetry of the exciton transitions. [S0163-1829( 99)01208-4].