Tunneling and interferences in very small GaAs metal-semiconductor field-effect transistors

Authors
Poirier, W Mailly, D Sanquer, M
Citation
W. Poirier et al., Tunneling and interferences in very small GaAs metal-semiconductor field-effect transistors, PHYS REV B, 59(16), 1999, pp. 10856-10863
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B-CONDENSED MATTER
ISSN journal
01631829 → ACNP
Volume
59
Issue
16
Year of publication
1999
Pages
10856 - 10863
Database
ISI
SICI code
0163-1829(19990415)59:16<10856:TAIIVS>2.0.ZU;2-J
Abstract
We study the transport through gated GaAs:Si wins of 0.5 mu m length in the insulating regime and observe transport via tunneling at very low temperat ure. We describe the mean positive magnetoconductance and the mesoscopic fl uctuations of the conductance (versus energy or magnetic field) purely with in one-elctctron interference model. [S0163-1829(99)10615-5].