Bulk changes in semiconductors using scanning probe microscopy: nm-size fabricated structures

Hemispherical p/n/p transistor structures ranging from 100 mu m down to 0.0 5 mu m in diameter are fabricated in CuInSe2, by application of a high elec tric field between a conducting diamond tip of an atomic force microscope a nd a CuInSe2 crystal. This leads to electromigration of Cu ions in the bulk of the material. The results of this thermally assisted process are the tr ansistor structures. These are characterized by scanning spreading resistan ce microscopy. For large devices these results are compared and found to ag ree with those of "conventional" electron-beam-induced current ones. Removi ng several tens of atomic layers from the top surface of a structure does n ot affect the spreading resistance image of the device. This indicates the three-dimensional hemispherical nature of the structures. [S0163-1829(99)13 515-X].