Phase transitions of Ba adsorption on a clean Si(001)-(2 x 1) studied by lo
w energy electron diffraction (LEED) and Auger electron spectroscopy (AES)
are reported. The depositions of the Ba were performed with (a) the substra
te held at room temperature followed by annealing at elevated temperatures,
and (b) the substrate held at 900 degrees C. While confirming earlier esta
blished phases, the existence of 4 x streaks in the (3 x 2) + c(6 x 2) and
(2 x 1) phases has been identified. Also found was a real-time phase transi
tion from a (3 x 2) phase to a mixture of (3 x 2) and c(6 x 2) phases durin
g sample cooling. Finally, it was found that AES of Ba;Si peak ratios exhib
it plateaus in the phase vs. temperature diagram for the (3 x 2), (3 x 2)+c
(6 x2), and (2 x 1)+4 x streak phases, indicating a temperature-dependent m
echanism limiting the Pa coverage. (C) 1999 Elsevier Science B.V. All right
s reserved.