Positron affinities and deformation potentials in cubic semiconductors

Positron affinities and deformation potentials are calculated in cubic bulk semiconductors using the density functional theory with the electron and p ositron energies in the local density approximation and generalized gradien t approximation, respectively. In order to estimate these quantities, two d ifferent forms of the electron-positron correlation potential are used. Pos itron affinities calculated using these two correlation potentials differ b y about 0.3 eV. Our calculated affinities in 3C-SiC are in better agreement with experiments than those obtained previously by another first principle s method. In the present work the positron affinity in BN is found to be qu ite close to the one in diamond.