Low-onset organic blue light emitting devices obtained by better interfacecontrol

Citation
N. Koch et al., Low-onset organic blue light emitting devices obtained by better interfacecontrol, APPL PHYS L, 74(20), 1999, pp. 2909-2911
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
20
Year of publication
1999
Pages
2909 - 2911
Database
ISI
SICI code
0003-6951(19990517)74:20<2909:LOBLED>2.0.ZU;2-9
Abstract
We demonstrate that highly efficient single-layer light emitting devices (L ED) can be realized by better control in the device production process, esp ecially regarding the interface between the active material and the metal c athode. The device cross-section was investigated using Auger depth profili ng and spectroscopy. Following this approach, LEDs with para-sexiphenyl (op tical gap: 3.1 eV) as active medium and aluminum as cathode were realized, which emit blue light at a bias of only 3.5 V, when the aluminum deposition rate is drastically reduced, namely from 10 to below 1 Angstrom/s. We find that the lower deposition rate of Al results in a decreased width of the i nterfacial region, where carbon, aluminum, and oxygen are intermixed. At th e same time the relative oxygen concentration at the cathode interface is i ncreased. However, the presence of oxygen does not lead to the formation of oxidized aluminum species, as verified by the Al local mixing model (LMM) Auger signal. (C) 1999 American Institute of Physics. [S0003-6951(99)00820- 7].