We demonstrate that highly efficient single-layer light emitting devices (L
ED) can be realized by better control in the device production process, esp
ecially regarding the interface between the active material and the metal c
athode. The device cross-section was investigated using Auger depth profili
ng and spectroscopy. Following this approach, LEDs with para-sexiphenyl (op
tical gap: 3.1 eV) as active medium and aluminum as cathode were realized,
which emit blue light at a bias of only 3.5 V, when the aluminum deposition
rate is drastically reduced, namely from 10 to below 1 Angstrom/s. We find
that the lower deposition rate of Al results in a decreased width of the i
nterfacial region, where carbon, aluminum, and oxygen are intermixed. At th
e same time the relative oxygen concentration at the cathode interface is i
ncreased. However, the presence of oxygen does not lead to the formation of
oxidized aluminum species, as verified by the Al local mixing model (LMM)
Auger signal. (C) 1999 American Institute of Physics. [S0003-6951(99)00820-
7].