Atomic geometry and energetics of vacancies and antisites in cubic boron nitride

Citation
W. Orellana et H. Chacham, Atomic geometry and energetics of vacancies and antisites in cubic boron nitride, APPL PHYS L, 74(20), 1999, pp. 2984-2986
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
20
Year of publication
1999
Pages
2984 - 2986
Database
ISI
SICI code
0003-6951(19990517)74:20<2984:AGAEOV>2.0.ZU;2-K
Abstract
We use first-principles calculations to investigate the atomic geometries a nd formation energies of vacancies (V-N, V-B) and antisites (B-N, N-B) in c ubic boron nitride. We find that V-N and V-B are the most stable defects in p-type and n-type conditions, respectively. They also exhibit intrinsic do nor (V-N) and acceptor (V-B) characters, which makes them good candidates f or compensation. The equilibrium geometries show large outward breathing re laxations for both vacancies and for B-N, with a slight Jahn-Teller distort ion from T-d symmetry. For N-B in neutral and negatives charge states, we f ind an off-center distortion, inducing a negative-U behavior. (C) 1999 Amer ican Institute of Physics. [S0003-6951(99)02120-8].