Observation of built-in electric field in InP self-assembled quantum dot systems

Citation
V. Davydov et al., Observation of built-in electric field in InP self-assembled quantum dot systems, APPL PHYS L, 74(20), 1999, pp. 3002-3004
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
20
Year of publication
1999
Pages
3002 - 3004
Database
ISI
SICI code
0003-6951(19990517)74:20<3002:OOBEFI>2.0.ZU;2-O
Abstract
Strong Franz-Keldysh oscillations were observed in the nonlinear reflection spectra of heterostructures with InP self-assembled quantum dots. These os cillations manifest a built-in electric field of about 30 kV/cm. We propose that this field originates from electric charge captured by the intrinsic defects on the dot interface. The presence of acceptor-like intrinsic defec t states is found to be a general feature of the InP/InGaP interface but wa s not observed in other structures with quantum dots such as InAs/GaAs. (C) 1999 American Institute of Physics. [S0003-6951(99)02920-4].