Visible cathodoluminescence of Er-doped amorphous AlN thin films

In this report, we demonstrate the observation of visible cathodoluminescen ce (CL) of Er-doped amorphous AlN films produced by sputtering. Optical tra nsmission studies point out that the films are highly transparent and the b and gap is about 5.61 eV. Elemental analysis by Rutherford backscattering s pectrometry shows that AlN films are stoichiometric. X-ray diffraction meas urements reveal that the films retain the amorphous structure even after an nealing in N-2 ambient at 1000 degrees C. The sharp characteristic emission lines in the CL spectra correspond to Er3+ intra-4f(n) shell transitions a nd are observed over the temperature range of 9-330 K. The results indicate the suitability of Er-doped amorphous AlN films for light-emitting device applications. (C) 1999 American Institute of Physics. [S0003-6951(99)05020- 2].