Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands

Citation
A. Pepin et al., Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands, APPL PHYS L, 74(20), 1999, pp. 3047-3049
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
20
Year of publication
1999
Pages
3047 - 3049
Database
ISI
SICI code
0003-6951(19990517)74:20<3047:TEOMTJ>2.0.ZU;2-F
Abstract
The temperature behavior of multiple tunnel junction (MTJ) devices made wit h sub-5-nm gold islands is investigated. A smooth decrease of the Coulomb g ap with increasing temperatures is observed. The critical temperature beyon d which the Coulomb blockade effect is suppressed is found to change as a f unction both of the average size of the islands and of the size of the two- dimensional (2D) array of islands forming the MTJ. This latter property is attributed to the role of disorder in the 2D array. Results are compared wi th Monte Carlo simulations of current transport through highly disordered 2 D arrays which reproduce the experimental evolution of the Coulomb gap with temperature. (C) 1999 American Institute of Physics. [S0003-6951(99)02020- 3].