Back-scattered electron imaging of microscopic segregation in (Si,Ge) single crystals

Authors
Lacayo, G Wollweber, J Schulz, D Schroder, W Neumann, W
Citation
G. Lacayo et al., Back-scattered electron imaging of microscopic segregation in (Si,Ge) single crystals, CRYST RES T, 34(4), 1999, pp. 509-517
Citations number
5
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
34
Issue
4
Year of publication
1999
Pages
509 - 517
Database
ISI
SICI code
0232-1300(1999)34:4<509:BEIOMS>2.0.ZU;2-X
Abstract
Compositional inhomogeneities of(Si,Ge) single crystals grown by the radio frequency (RF) heated float zone technique have been studied using the back -scattered electron (BSE) mode of a scanning electron microscope. Numerical analysis of the images by Fast Fourier Transformation (FFT) showed that th e number of spatial frequencies with substantial amplitudes is increased wh en investigating longitudinal sections of crystals containing dislocations instead of dislocation-free crystals. This can be attributed to different g rowth conditions in terms of super-cooling.