Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon

Authors
Kubota, AA Economou, DJ
Citation
Aa. Kubota et Dj. Economou, Molecular dynamics simulations of ion-induced rearrangement of ultrathin oxide films on silicon, IEEE PLAS S, 27(1), 1999, pp. 106-107
Citations number
8
Categorie Soggetti
Physics
Journal title
IEEE TRANSACTIONS ON PLASMA SCIENCE
ISSN journal
00933813 → ACNP
Volume
27
Issue
1
Year of publication
1999
Pages
106 - 107
Database
ISI
SICI code
0093-3813(199902)27:1<106:MDSOIR>2.0.ZU;2-6
Abstract
We present three-dimensional images of ion-irradiated ultrathin oxide films on silicon surfaces, generated from molecular dynamics simulations. The su rface has the tendency to form oxide islands as the him is sputtered away b y 100 eV Ar+ ions. We also show an image of a "peeling" oxide strand which forms occasionally as a result of ions impacting at an angle of 45 degrees from normal.