Switching transient analysis of a metal/ferroelectric/semiconductor switchdiode with high speed response to infrared light

Authors
Chen, FY Ho, JJ Fang, YK Shu, CY Hsu, CY Chen, JR Ju, MS
Citation
Fy. Chen et al., Switching transient analysis of a metal/ferroelectric/semiconductor switchdiode with high speed response to infrared light, IEEE ULTRAS, 46(3), 1999, pp. 502-510
Citations number
16
Categorie Soggetti
Optics & Acoustics
Journal title
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL
ISSN journal
08853010 → ACNP
Volume
46
Issue
3
Year of publication
1999
Pages
502 - 510
Database
ISI
SICI code
0885-3010(199905)46:3<502:STAOAM>2.0.ZU;2-X
Abstract
A thin PbTiO3-n-p(+) silicon switch diode has been developed, in which the switching voltage (the turned-on voltage) changes in proportion to the infr ared light power, The diode has a rapid response time of 0.65 mu s compared with other conventional infrared sensors. It is attributed to the rapid sw itching device structure and the smaller pyroelectric layer thickness, 50 n m. In this paper, we have analyzed the rapid switching transient response b y using heat conduction and switching theory successfully. The experimental results are in agreement with the theoretical analysis.