An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment

Authors
Nilsson, PO Mankefors, S Lundgren, E
Citation
Po. Nilsson et al., An ultrathin buried Si layer in GaAs studied by soft X-ray emission spectroscopy and surface X-ray diffraction: theory and experiment, J ALLOY COM, 286(1-2), 1999, pp. 31-36
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
286
Issue
1-2
Year of publication
1999
Pages
31 - 36
Database
ISI
SICI code
0925-8388(19990505)286:1-2<31:AUBSLI>2.0.ZU;2-P
Abstract
A buried Si(100) monolayer in GaAs has been investigated by soft X-ray emis sion spectroscopy and surface X-ray diffraction. In both cases the data wer e analyzed by computations. The SXE spectra were compared to ab initio resu lts for several different atomic geometries. An optimal fir was found for 6 3% Si in Ga-sites according to these calculations, while SXD indicates a so mewhat lower value. Details on the electronic structure were also extracted . (C) 1999 Elsevier Science S.A. All rights reserved.