Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon

The averaged values of radii (r) over bar and concentration (n) over bar of microdefects which are the SiOx precipitates surrounded by dislocation loo ps were determined from the measured X-ray integral reflectivities of Czoch ralski grown silicon crystals subjected to annealing at high hydrostatic pr essure (10(7)-10(9) Pa) as well as from analysis of differential diffuse sc attering behaviour near the Bragg angle. The values of these parameters and the Debye-Waller static factor behaviour show that process of the SiOx dis solution which usually takes place at the temperatures about 1500 K is slow ed down in condition of hydrostatic pressure as comparing with treatment of such samples about 1500 K but by atmospheric pressure (P=10(5) Pa). (C) 19 99 Elsevier Science S.A. All rights reserved.