Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering

Authors
Dmitruk, I Mikhailik, T Zymierska, D Auleytner, J
Citation
I. Dmitruk et al., Comparative studies of Si single crystal surface disorder by using variousmethods of electromagnetic wave scattering, J ALLOY COM, 286(1-2), 1999, pp. 302-308
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
286
Issue
1-2
Year of publication
1999
Pages
302 - 308
Database
ISI
SICI code
0925-8388(19990505)286:1-2<302:CSOSSC>2.0.ZU;2-5
Abstract
Silicon surface roughness characterization using electromagnetic wave scatt ering (from X-ray to infrared range) together with profilometer and AFM mea surements are performed. The dependence of relief characterisation accuracy on the wavelength of the used source is analyzed. The comparison of both l ocal (profilometer, AFM) and statistical data (grazing X-ray scattering, op tical specular reflectance, multi-angle-of-incidence (MAI)-ellipsometry) is carried out. (C) 1999 Elsevier Science S.A. All rights reserved.