Characterisation of laser ablated silicon oxynitride thin films

The following paper presents a study on laser ablated silicon oxynitride (S iOxNy) films, obtained by laser reactive ablation (LRA) method and by low p ressure chemical vapour deposition (LPCVD). The aim of this paper is to dem onstrate that it is possible to use the Bruggeman effective medium approxim ation (EMA) to characterise the LRA deposited SiOxNy films, the agreement b ring as good as for LPCVD deposited SiOxNy films. Both LRA and LPCVD deposi ted SiOxNy films were considered to be physical mixtures of two distinct ph ases SiO2 and Si3N4. (C) 1999 Elsevier Science B.V. All rights reserved.