White beam pin-hole patterns of implanted layers

The synchrotron Laue method with a beam limited by a pin hole was applied f or studying the implanted layers in silicon and in A(III)B(V) multicompound epitaxial layers. A significant difference between the micro-laue patterns in case of heavy and light ion implantation was observed. In the first cas e the pin-hole pattern contained spots coming from different layers mutuall y displaced due to lattice deformation. In the case of light ion implantati on into silicon the lattice deformation effects were revealed in strongly o verexposed patterns by activation of forbidden reflections due to lattice t etragonalization. It was found that all interference fringes connected with the spherical wave diffraction contributed to a long tail corresponding to the plane of diffraction. The possibility of observation of asymptotic dis tortion scattering due to dislocation was also proved. (C) 1999 Elsevier Sc ience B.V. All rights reserved.