Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n(+))-oxide-silicon (p) structures: Effect of the oxide thickness

The variations with temperature of the Fowler-Nordheim (FN) emission in met al-oxide-semiconductor structures when the injecting electrode is the degen erate polysilicon gate (n(+)) are investigated. The temperature dependence of the electron affinity difference Phi between Si and SiO2 and of the barr ier height Phi(b) for three oxide thicknesses (5, 7, and 12 nm) are analyze d. The results are numerically derived from the exact integral expression o f the FN current as functions of temperature varying from 25 to 300 degrees C. The variation with temperature of both the obtained Phi and d Phi/dT pa rameters at the polysilicon (n(+))-oxide barrier are discussed with respect to the literature data. (C) 1999 American Institute of Physics. [S0021-897 9(99)01911-8].