Determination of barrier oxidation states in spin dependent tunneling structures

Citation
M. Sharma et al., Determination of barrier oxidation states in spin dependent tunneling structures, J APPL PHYS, 85(11), 1999, pp. 7803-7806
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
11
Year of publication
1999
Pages
7803 - 7806
Database
ISI
SICI code
0021-8979(19990601)85:11<7803:DOBOSI>2.0.ZU;2-2
Abstract
X-ray photoelectron spectroscopy (XPS) was used to characterize spin depend ent tunneling (SDT) structures using plasma oxidized Ta as the insulating b arrier. We are able to determine the relative proportion of the different o xidation states of the insulating barrier material. Information available f rom this technique includes barrier oxidation states, thickness, and comple teness of oxidation. Information on the electrodes is also obtained: specif ically, Ta is found to diffuse into NiFe, and oxidation of Ni is observed. XPS is shown to be a powerful tool in characterizing the materials sets tha t comprise SDT devices. (C) 1999 American Institute of Physics. [S0021-8979 (99)04910-5].